Electrical characteristics improvement of oxygen-annealed MOCVD-TiO 2 films

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 519-523

  Lee, Ming Kwei ^a   Huang, Jung Jie ^a   Wu, Tsung Shun ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; FILM GROWTH; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PERMITTIVITY; SEMICONDUCTING SILICON; THIN FILMS;

ELECTRON SPECTROSCOPY CHEMICAL ANALYSIS (ESCA); EQUIVALENT OXIDE THICKNESS (EOT); HYSTERISIS LOOP SHIFT VOLTAGES; INTEGRATED CIRCUIT FABRICATION;

TITANIUM OXIDES;

EID: 18744414195     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/007     Document Type: Article

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