Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors

Thin Solid Films

Volumn 517, Issue 16, 2009, Pages 4548-4554

  Albertin, K F ^a   Pereyra, I ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Capacitors; Deposition process; Electrical properties and measurements; High dielectrics; Raman spectroscopy; Sputtering; Titanium oxide; X ray diffraction

Indexed keywords

CAPACITANCE VOLTAGES; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION PROCESS; DIELECTRIC CONSTANTS; DIELECTRIC LAYERS; EFFECTIVE DIELECTRIC CONSTANTS; EFFECTIVE OXIDE THICKNESS; ELECTRICAL PROPERTIES AND MEASUREMENTS; GATE VOLTAGES; HIGH DIELECTRIC CONSTANTS; INTERFACE QUALITIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXYGEN PARTIAL PRESSURES; THIN DIELECTRIC LAYERS;

CAPACITANCE; CAPACITORS; CERAMIC CAPACITORS; CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; DIFFRACTION; ELECTRIC CONDUCTIVITY; METALLIC COMPOUNDS; MOS CAPACITORS; ORGANIC LIGHT EMITTING DIODES (OLED); OXYGEN; PERMITTIVITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS; TITANIUM; X RAY DIFFRACTION;

TITANIUM OXIDES;

EID: 67349220687     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.12.045     Document Type: Article

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