Field-programmable rectification in rutile Ti O2 crystals

Applied Physics Letters

Volumn 91, Issue 11, 2007, Pages

  Jameson, John R ^a   Fukuzumi, Yoshiaki ^a   Wang, Zheng ^a   Griffin, Peter ^a   Tsunoda, Koji ^b   Meijer, G Ingmar ^c   Nishi, Yoshio ^a  

^a Stanford University

^b FUJITSU LABORATORIES LTD   (Japan)

^c IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; SURFACE STRUCTURE; TITANIUM DIOXIDE;

FIELD PROGRAMMABLE RECTIFICATION; PROGRAMMING VOLTAGE; SCHOTTKY BARRIERS;

CRYSTAL STRUCTURE;

EID: 34548683233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769961     Document Type: Article

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