One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 6, 2005, Pages 1173-1178

  Wu, W ^a   Jung, G Y ^a   Olynick, D L ^b   Straznicky, J ^a   Li, Z ^a   Li, X ^a   Ohlberg, D A A ^a   Chen, Y ^c   Wang, S Y ^a   Liddle, J A ^b   Tong, W M ^a,d   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of California   (United States)

^d Technology Development Operations   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ELECTRODES; EVAPORATION; IMAGING TECHNIQUES; LANGMUIR BLODGETT FILMS; NANOTECHNOLOGY; PRINTED CIRCUIT BOARDS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SWITCHING; ULTRAVIOLET RADIATION;

MEMORY STRUCTURE; MOLECULAR COMPONENTS; MOLECULAR MEMORY CIRCUITS; NANOIMPRINT LITHOGRAPHY (NIL);

ELECTRONICS ENGINEERING;

EID: 20144387749     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3176-y     Document Type: Article

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