Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

Journal of Materials Research

Volumn 23, Issue 3, 2008, Pages 812-818

  Kinoshita, Kenta ^a   Noshiro, H ^a   Yoshida, C ^a   Sato, Y ^a   Aoki, M ^a   Sugiyama, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRODES; MATHEMATICAL MODELS; SEMICONDUCTING FILMS;

DIRECT CURRENT TRANSPORT PROPERTIES; RELATIVE STANDARD DEVIATION (RSD); RESISTIVE RANDOM-ACCESS MEMORY (RERAM);

RANDOM ACCESS STORAGE;

EID: 41449107526     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0093     Document Type: Article

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