Applying complementary trap characterization technique to crystalline γ-phase-Al2O3 for improved understanding of nonvolatile memory operation and reliability

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2907-2916

  Zahid, Mohammed B ^a   Aguado, Daniel Ruiz ^a,b   Degraeve, R ^a   Wang, W C ^b   Govoreanu, Bogdan ^a   Toledano Luque, María ^a,c   Afanas'Ev, V V ^b   Van Houdt, Jan ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Charge trap (CT) memory; crystalline Al2O 3; photodepopulation spectroscopy (PDS); TANOS; trap characterization; trap spectroscopy by charge injection and sensing (TSCIS); two pulse C V

Indexed keywords

CHARGE TRAP; CRYSTALLINE AL2O 3; PHOTODEPOPULATION SPECTROSCOPY (PDS); TANOS; TRAP CHARACTERIZATION; TRAP SPECTROSCOPY; TWO-PULSE C-V;

CHARGE TRAPPING; CRYSTALLINE MATERIALS; DEFECT DENSITY; ELECTRON MOBILITY; NITRIDES; NONVOLATILE STORAGE; SILICON COMPOUNDS; SIZE DISTRIBUTION;

ALUMINUM;

EID: 78049260051     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2071071     Document Type: Article

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