A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Solid-State Electronics

Volumn 54, Issue 11, 2010, Pages 1384-1391

  Cho, Moonju ^a   Degraeve, Robin ^a   Roussel, Philippe ^a   Govoreanu, Bogdan ^a   Kaczer, Ben ^a   Zahid, Mohammed B ^a   Simoen, Eddy ^a   Arreghini, Antonio ^a   Jurczak, Malgorzata ^a   Houdt, Jan Van ^a   Groeseneken, Guido ^a  

^a IMEC   (Belgium)

Author keywords

Charge trapping; Modeling; Non volatile memory; Trap profile

Indexed keywords

CHARGE VOLTAGE; DIRECT TUNNELING; DISTANCE CALCULATION; GATE VOLTAGES; GAUSS' LAW; MEMORY APPLICATIONS; MODELING; NON-VOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; OXIDE TRAP DENSITY; OXIDE TRAPS; QUANTIZED ENERGY LEVELS; RESIDUAL CHARGE; SCANNING RATE; SHOCKLEY-READ-HALL; THEORETICAL MODELING; TRAP DISTRIBUTIONS; TRAP ENERGY LEVELS; TRAP PROFILE; TRAP SPECTROSCOPY; WKB APPROXIMATIONS;

APPROXIMATION THEORY; CHARGE INJECTION; CHARGE TRAPPING; ELECTRON ENERGY LEVELS; ELECTRONS; SEMICONDUCTING SILICON COMPOUNDS;

FLASH MEMORY;

EID: 77955654137     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.046     Document Type: Article

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