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Volumn 95, Issue 13, 2009, Pages

Band alignment and electron traps in Y2O3 layers on (100)Si

(10) Wang, W C a Badylevich, M a Afanas'Ev, V V a Stesmans, A a Adelmann, C b Van Elshocht, S b Kittl, J A b Lukosius, M c Walczyk, Ch c Wenger, Ch c

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

c IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC VAPOR DEPOSITION; BAND ALIGNMENTS; CHARGE RETENTION TIME; CONDUCTION BAND OFFSET; INTERNAL PHOTOEMISSION; OPTICAL ENERGY; ROOM TEMPERATURE;

CHARGE TRAPPING; CONDUCTION BANDS; ELECTRON MOBILITY; PHOTOELECTRICITY; SILICON COMPOUNDS; SILICON OXIDES; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 70349706019 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236536 Document Type: Article

Times cited : (45)

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