Improvement of interpoly dielectric characteristics by plasma nitridation and oxidation for future NAND flash memory

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1199-1202

  Ho, Ching Yuan ^a,b   Lien, Chenhsin ^b   Sakamoto, Y ^a   Yang, Ru Jye ^a   Fijita, Hiro ^a   Liu, C H ^a   Lin, Y M ^a   Pittikoun, Steven ^a   Aritome, S ^a  

^a POWERCHIP TECHNOLOGY CORPORATION   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Data retention; Interpoly dielectric (IPD); Plasma nitridation; Programming speed

Indexed keywords

CHEMICAL OXYGEN DEMAND; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; NITRIDATION; OXIDATION; PLASMAS; SILICON COMPOUNDS; SILICON NITRIDE;

CELL PROGRAMMINGS; DATA RETENTION; DATA RETENTIONS; EDGE PROFILES; ELECTRICAL PROPERTIES; FLOATING GATES; INTERPOLY DIELECTRIC (IPD); INTERPOLY DIELECTRICS; LEAKAGE PATHS; NAND FLASH MEMORIES; PLASMA NITRIDATION; PLASMA OXIDATIONS; PROGRAMMING SPEED; PROGRAMMING VOLTAGES; WORD LINES;

FLASH MEMORY;

EID: 55149092777     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004972     Document Type: Article

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