Nitride thickness scaling limitations in TANOS charge trapping devices

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 130-132

  Melde, Thomas ^a   Beug, M Florian ^a   Bach, Lars ^a   Riedel, Stephan ^a   Ludwig, Christoph ^a   Mikolaijck, Thomas ^b  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Charge distribution; Charge trapping; Nitride; Retention; SONOS; TANOS

Indexed keywords

ALUMINA; ALUMINUM; CHARGE TRAPPING; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; LIGHT METALS; NITRIDES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY;

ALUMI NUM OXIDE; CHARGE TRAPPING DEVICES; CHARGE-LOSS; INTERNATIONAL CONFERENCES; MEMORY TECHNOLOGY; NITRIDE; NON-VOLATILE; RETENTION; SEMICONDUCTOR MEMORIES; SONOS; TANOS; THICKNESS SCALING;

CHARGE DISTRIBUTION;

EID: 50249179202     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.46     Document Type: Conference Paper

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