Trap spectroscopy by charge injection and sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Degraeve, R ^a   Cho, M ^a   Govoreanu, B ^a   Kaczer, B ^a   Zahid, M B ^a   Van Houdt, J ^a   Jurczak, M ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ANALYSIS; DIELECTRIC STACKS; DIFFERENT PROCESS; MATERIAL ANALYSIS; MEASUREMENT PRINCIPLES; TRAP DENSITIES; TRAP ENERGY LEVELS; TRAP SPECTROSCOPIES;

ELECTRON DEVICES; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 64549147008     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796812     Document Type: Conference Paper

References (5)

1. B. Kaczer et al., IRPS, pp. 20-27, 2008.
2. F. Schuler et al., IRPS, pp. 26-33, 2002.
3. R. Degraeve et al., INFOS 2005.
4. B. Govoreanu et al., at IEDM 2008.
5. G. Van den bosch et al, proc. ICMTD/NVSMW, p. 128, 2008.