Defect profiling in the SIO2 / AL2O3 interface using variable Tcharge-Tdischarge Amplitude Charge Pumping (VT2ACP)

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 21-25

  Zahid, M B ^a   Degraeve, R ^a   Cho, M ^a   Pantisano, L ^a   Aguado, D R ^a   Van Houdt, J ^a   Groeseneken, G ^a,b   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; CHARGING TIME; ENERGY RANGES; ORDER OF MAGNITUDE; SCANNING RATE; TRANSITION LAYERS; TRAP DENSITY;

ALUMINUM; CLUSTERING ALGORITHMS; CRYSTALLINE MATERIALS; FLASH MEMORY; PERSONAL DIGITAL ASSISTANTS; PUMPS; SCANNING; SILICON WAFERS; TIME MEASUREMENT;

SILICON COMPOUNDS;

EID: 70449091872     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173219     Document Type: Conference Paper

References (12)

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2. 3 Interpoly Dielectric for Embedded Flash Memory Applications" NVSMW / ICMTD, pp. 12-15 (2008)
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4. G. Groeseneken, H.E. Maes, N. Beltran, and R.F. De Keersmaecker. "A Reliable Approach to Charge-Pumping Measurements in MOS Transistors".IEEE Transaction on Electron Devices, Vol. 31, No. 1, pp. 42-53, 1984
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