SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

Single crystalline Sc2 O3 / Y2 O 3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)

(8) Tarnawska, L a Giussani, A a Zaumseil, P a Schubert, M A a Paszkiewicz, R b Brandt, O c Storck, P d Schroeder, T a

a IHP (Germany)

b WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

d SILTRONIC AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DETECTION LIMITS; DIFFUSE X-RAY SCATTERING; EX SITU; GAN LAYERS; GAN THIN FILMS; HETEROSTRUCTURES; HIGH QUALITY; LATTICE MISFITS; MISFIT DISLOCATIONS; OXIDE BUFFER; PLANAR DEFECT; SI (1 1 1); SI WAFER; SINGLE-CRYSTALLINE; SLIP PLANE; STRUCTURAL QUALITIES; TEM; VIRTUAL SUBSTRATES; WILLIAMSON-HALL; X RAY REFLECTIVITY;

CRYSTALLINE MATERIALS; CRYSTALS; EPITAXIAL GROWTH; FILM PREPARATION; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SCATTERING; X RAYS;

GALLIUM ALLOYS;

EID: 77957731785 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3485830 Document Type: Article

Times cited : (35)

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