Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si

Applied Physics Letters

Volumn 87, Issue 14, 2005, Pages 1-3

  Raghavan, Srinivasan ^a   Weng, Xiaojun ^a   Dickey, Elizabeth ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FORMATION ENERGY; VACANCY FORMATION;

ALUMINUM; COMPRESSIVE STRENGTH; GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 28344440861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2081128     Document Type: Article

References (19)

1. A. Krost, A. Dadgar, G. Strassburger, and R. Clos, Phys. Status Solidi A 200, 26 (2003).
2. H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, and J. A. Freitas, J. Appl. Phys. 89, 7846 (2001).
3. A. Reiher, J. Blasing, A. Dadgar, A. Diez, and A. Krost, J. Cryst. Growth 248, 563 (2003).
4. J. Blasing, A. Reiher, A. Dadgar, A. Diez, and A. Krost, Appl. Phys. Lett. 81, 2722 (2002).
5. J. Han, K. E. Waldrip, S. R. Lee, J. J. Figiel, S. J. Hearne, G. A. Peterson, and S. M. Myers, Appl. Phys. Lett. 78, 67 (2001).
6. K. E. Waldrip, J. Han, J. J. Figiel, H. Zhou, E. Makarona, and A. V. Nurmikko, Appl. Phys. Lett. 78, 3205 (2001).
7. S. Raghavan and J. Redwing, J. Appl. Phys. 98, 023515 (2005).
8. S. Raghavan and J. M. Redwing, J. Appl. Phys. 98, 023514 (2005).
9. J. D. Acord, S. Raghavan, D. W. Snyder, and J. M. Redwing, J. Cryst. Growth 272, 65 (2004).
10. P. Chaudhari, J. Vac. Sci. Technol. 9, 520 (1972).
11. S. Raghavan and J. M. Redwing, J. Cryst. Growth 261, 294 (2004).
12. J. A. Floro, E. Chason, S. R. Lee, R. D. Twesten, R. Q. Hwang, and L. B. Freund, J. Electron. Mater. 26, 969 (1997).
13. S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, J. Hunter, H. Amano, and I. S. T. Song, Appl. Phys. Lett. 74, 356 (1999).
14. S. Raghavan, J. D. Acord, and J. M. Redwing, Appl. Phys. Lett. 86, 261907 (2005).
15. D. M. Follstaedt, J. Han, P. Provencio, and J. G. Fleming, MRS Internet J. Nitride Semicond. Res. 4S1, G3.72 (1999).
16. S. Raghavan (unpublished). The same behavior, namely high dislocation density at the interface followed by a drop, is also observed in the second GaN layer. However, at the second GaN/first AlN interface, it is difficult to distinguish between dislocations that have originated at the interface and those that have threaded through from the even more defective first GaN layer.
17. N. Kuwano, T. Tsuruda, Y. Adachi, S. Terao, S. Kamiyama, H. Amano, and I. Akasaki, Phys. Status Solidi A 192, 366 (2002).
18. S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, and S. Mahajan, Appl. Phys. Lett. 85, 1 (2004).
19. S. Raghavan and J. M. Redwing, J. Appl. Phys. 96, 2995 (2004).