Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4891-4895

  Paszkiewicz, R ^a   Paszkiewicz, B ^a   Wosko, M ^a   Szyszka, A ^a   Marciniak, L ^a   Prazmowska, J ^a   Macherzynski W ^a   Serafinczuk J ^a   Kozlowski J ^a   Tlaczala, M ^a   Kovac J ^b,c   Novotny I ^b   Skriniarova J ^b   Hasko D ^b,c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

A3. MOVPE; A3. Radio frequency sputtering; B1. Gallium nitride; B1. Si; B1. Temperature graded nitride multi layer; B1. ZnO

Indexed keywords

ATMOSPHERIC PRESSURE; CARBON; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GRAPHITE; METALLIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; MICROELECTROMECHANICAL DEVICES; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SILICON WAFERS; SPACE OPTICS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC ALLOYS; ZINC OXIDE;

A3. MOVPE; A3. RADIO-FREQUENCY SPUTTERING; B1. GALLIUM NITRIDE; B1. SI; B1. TEMPERATURE GRADED NITRIDE MULTI-LAYER; B1. ZNO;

GALLIUM ALLOYS;

EID: 56249117650     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.017     Document Type: Article

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