Growth of crystalline γ- Al2 O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Merckling, C ^a,b   El Kazzi, M ^b   Saint Girons, G ^b   Hollinger, G ^b   Largeau, L ^c   Patriarche, G ^c   Favre Nicolin, V ^d,e   Marty, O ^b  

^a STMICROELECTRONICS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c CNRS   (France)

^d CEA GRENOBLE   (France)

^e UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE QUALITY; FILM SURFACES; STRUCTURAL QUALITY; SUBSTRATE ORIENTATION;

BINARY ALLOYS;

EID: 34547584774     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753684     Document Type: Article

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