Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1) - Structure and electrical properties

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 638-642

  Chen, C P ^a   Hong, M ^a   Kwo, J ^a   Cheng, H M ^b   Huang, Y L ^a   Lin, S Y ^b   Chi, J ^b   Lee, H Y ^c   Hsieh, Y F ^d   Mannaerts, J P ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d MATERIALS ANALYSIS TECHNOLOGY INC   (Taiwan)

Author keywords

A3.Epitaxially grown; A3.MBE; B1.Sc2O3

Indexed keywords

EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON COMPOUNDS; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPITAXIALLY GROWN; ROCKING CURVES; SC2O3; SHARP INTERFACES;

SCANDIUM COMPOUNDS;

EID: 21044449572     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.084     Document Type: Conference Paper

References (6)

1. B.P. Gila, J.W. Johnson, R. Mehandru, B. Luo, A.H. Onstine, K.K. Allums, V. Krishnamoorthy, S. Bates, C.R. Abernathy, F. Ren, and S.J. Pearton Phys. Stat. Sol. (a) 188 2001 239
2. A.R. Kortan, M. Hong, J. Kwo, P. Chang, C.P. Chen, J.P. Mannaerts, S.H. Liou, Conference Proceedings Symposium F, Materials Research Society Spring Meeting 2004.
3. M. Hong, M. Passlack, J.P. Mannaerts, J. Kwo, S.N.G. Chu, N. Moriya, S.Y. Hou, and V.J. Fratello J. Vac. Sci. Technol. B 14 3 1996 2297
4. M. Hong, A.R. Kortan, J. Kwo, H.Y. Lee, Y.F. Hsieh, C.P. Chen, Y.L. Huang, unpublished results, 2004.
5. M. Hong, A.R. Kortan, J. Kwo, J.P. Mannaerts, C.M. Lee, J.I. Chyi, Proceedings of 2000 IEEE International Symposium on Compound Semiconductors, p. 495, 00TH 9498.
6. M. Hong, A.R. Kortan, H.M. Ng, J. Kwo, S.N.G. Chu, J.P. Mannaerts, A.Y. Cho, C.M. Lee, J.I. Chyi, and K.A. Anselm J. Vac. Sci. Technol. B 20 3 2002 1274