On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 1117-1120

  Chung, Jinwook W ^a   Lu, Bin ^a   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

HEMT; High electron mobility transistor; Integration; MOSFET; Nitride semiconductors; Silicon

Indexed keywords

ALGAN/GAN; ANALOG TO DIGITAL CONVERTERS; HEMT; HIGH THERMAL STABILITY; HIGH-POWER; MIXED-SIGNAL ELECTRONICS; MOS-FET; NITRIDE LAYERS; NITRIDE SEMICONDUCTORS; ON-WAFER; POWER REGULATORS; POWER TRANSISTORS; SEAMLESS INTEGRATION; SI CMOS; SI DEVICES; SI(0 0 1); SPEED DIFFERENTIAL; SUBSTRATE REMOVAL; VIRTUAL SUBSTRATES; WAFER BONDING PROCESS;

ANALOG CIRCUITS; CMOS INTEGRATED CIRCUITS; DIFFERENTIAL AMPLIFIERS; DIGITAL CIRCUITS; DIGITAL DEVICES; ELECTRON MOBILITY; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; INTEGRATION; MICROWAVES; MOSFET DEVICES; POWER ELECTRONICS; SILICON; SILICON WAFERS; SUBSTRATES; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; TRANSISTORS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950003740     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165897     Document Type: Conference Paper

References (3)

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3. S. Nakamura, G. Fasol, and S. J. Pearton, "The Blue Laser Diode: The Complete Story," Springer (2008).