Polarity control of GaN grown on ZnO (000 1-) surfaces

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Kobayashi, Atsushi ^a   Kawaguchi, Yuji ^a   Ohta, Jitsuo ^a,c   Fujioka, Hiroshi ^a,c   Fujiwara, Katsutoshi ^b   Ishii, Akira ^b,d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE OPERATIONS; PULSED LASER DEPOSITION; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; ZINC OXIDE;

GROWTH TEMPERATURES; HETEROINTERFACES; POLARITY; STRUCTURAL PROPERTIES;

GALLIUM NITRIDE;

EID: 33646537471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200157     Document Type: Article

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