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Volumn 497, Issue 1-3, 2002, Pages 247-253
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Study of the transition from the ideal Si( 1 1 1)-H(1 × 1) surface to the (7 × 7) reconstruction by HREELS, UPS and LEED
a
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Author keywords
Electron energy loss spectroscopy (EELS); Hydrogen atom; Low energy electron diffraction (LEED); Semiconducting surfaces; Silicon; Surface relaxation and reconstruction; Thermal desorption
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Indexed keywords
ANNEALING;
CHARGE TRANSFER;
CHEMICAL BONDS;
CRYSTAL DEFECTS;
DIELECTRIC PROPERTIES;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRONIC PROPERTIES;
FERMI LEVEL;
HYDROGEN;
LOW ENERGY ELECTRON DIFFRACTION;
RELAXATION PROCESSES;
SEMICONDUCTING SILICON;
SINGLE CRYSTALS;
TEMPERATURE PROGRAMMED DESORPTION;
SURFACE RELAXATION;
PHASE TRANSITIONS;
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EID: 0037137914
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)01647-8 Document Type: Article |
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Times cited : (20)
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References (20)
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