Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex- Pr2 O3 (0001)Si(111) support systems

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Schroeder, T ^a   Zaumseil, P ^a   Weidner, G ^a   Lupina, G ^a   Wenger, Ch ^a   Mussig H J ^a   Storck, P ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE COMPOSITIONS; PHASE MATCHING; STACKED DOMAINS; X-RAY REFLECTIVITY;

COMPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ION BEAMS; MICROSTRUCTURE; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 29744447726     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149186     Document Type: Review

References (41)

1. R. Waser, Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices (Wiley-VCH, New York, 2003).
2. J. P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic, Dordrecht, Netherlands, 1991).
3. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices (Kluwer Academic, Dordrecht, Netherlands, 1999).
4. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
5. J.-P. Colinge, Proceedings of the 34th ESSDERC 2004, Vol. 45 (unpublished).
6. T. H. Ning, IBM J. Res. Dev. 46, 181 (2002).
7. H.-S. P. Wong, IBM J. Res. Dev. 46, 133 (2002).
8. M. Yang et al., Tech. Dig. - Int. Electron Devices Meet. 2003, 453.
9. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, IEEE Electron Device Lett. 8, 410 (1987).
10. R.-H. Yan, A. Ourmazd, and K. F. Lee, IEEE Trans. Electron Devices 39, 1704 (1992).
11. H.-S. P. Wong, K. K. Chan, and Y. Taur, Proc. IEEE 87, 537 (1999).
12. D. Hisamoto et al., IEEE Trans. Electron Devices 47, 2320 (2000).
13. H. J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, and V. Zavodinsky, Predictive Simulation of Semiconductor Processing: Status and Challenges, in Springer Series in Materials Science Vol. 72 (Springer, New York, 2004), Chap., p. 259.
14. T. Schroeder, P. Zaumseil, G. Weidner, G. Lippert, A. Mane, G. Lupina, J. Dabrowski, and H.-J. Müssig (unpublished).
15. T. Schroeder, T.-L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, and H.-J. Müssig, Appl. Phys. Lett. 85, 1229 (2004).
16. T. Schroeder et al., J. Appl. Phys. 97, 074906 (2005).
17. E. J. Tarsa, J. S. Speck, and McD. Robinson, Appl. Phys. Lett. 63, 539 (1993).
18. J. P. Liu, P. Zaumseil, E. Bugiel, and H.-J. Osten, Appl. Phys. Lett. 79, 671 (2001).
19. R. C. Henderson, W. J. Polito, and J. Simpson, Appl. Phys. Lett. 16, 15 (1970).
20. R. Feidenhansl, Surf. Sci. Rep. 10, 105 (1989).
21. I. K. Robinson and D. J Tweet, Rep. Prog. Phys. 55, 599 (1992).
22. J. Als-Nielsen and D. McMorrow, Elements of Modern X-Ray Physics (Wiley, New York, 2001).
23. B. E. Warren, X-Ray Diffraction (Dover, New York, 1990).
24. U. Pietsch, T. Baumbach, and V. Holy, High-Resolution X-Ray Scattering from Thin Films and Lateral Nanostructures (Springer, New York, 2004).
25. P. Zaumseil, Rocking and Reflectivity Curve Simulation software RC-REF-SIM-WIN, IHP, zaumseil@ihp-microelectronics.com
26. P. Zaumseil and T. Schroeder, J. Phys. D 38, A138 (2005).
27. M. Watanabe, H. Muguruma, M. Asada, and S. Arai, Jpn. J. Appl. Phys., Part 1, Part 1 29, 1803 (1990).
28. C.-C. Cho, H. Y. Liu, B. E. Gnade, T. S. Kim, and Y. Nishioka, J. Vac. Sci. Technol. A 10, 769 (1992).
29. M. A. Olmstead, Thin Films: Heteroepitaxial Systems (World Scientific, Singapore, 1999), Chap., p. 211.
30. K. V. Ravi, Thin Solid Films 31, 171 (1976).
31. A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki, Appl. Phys. Lett. 85, 5322 (2004).
32. L. Pauling and M. D. Shappell, Z. Kristallogr. 69, 415 (1928).
33. B. G. Hyde, D. J. M. Bevan, and L. Eyring, Philos. Trans. R. Soc. London, Ser. A 259, 583 (1968).
34. T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, and H.-J. Müssig, Appl. Phys. Lett. 87, 022902 (2005).
35. A. Fissel, J. Dabrowski, and H. J. Osten, J. Appl. Phys. 91, 8986 (2002).
36. J. E. Prieto, Ch. Rath, R. Müller, R. Miranda, and K. Heinz, Surf. Sci. 401, 248 (1998).
37. T. C. Noakes, P. Bailey, D. T. Dekadjevi, and M. A. Howson, Phys. Rev. B 68, 155425 (2003).
38. N. S. Sokolov, J. C. Alvarez, Yu. V. Shusterman, N. L. Yakovlev, R. M. Overney, Y. Itoh, I. Takahashi, and J. Harada, Appl. Surf. Sci. 104/105, 402 (1996).
39. C. R. Wang, B. H. Müller, and K. R. Hofmann, Thin Solid Films 410, 72 (2002).
40. B. E. Watts, Thin Solid Films 18, 1 (1973).
41. S. Cristoloveanu, IEEE Trans. Electron Devices 47, 1018 (2000).