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Journal of Physics D: Applied Physics

Volumn 42, Issue 21, 2009, Pages

Synchrotron x-ray characterization of structural defects in epi-Ge/Pr 2O3/Si(1 1 1) layer stacks

(4) Zaumseil, P a Giussani, A a Storck, P b Schroeder, T a

a IHP (Germany)

b SILTRONIC AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC QUALITY; DIFFUSE SCATTERING; DOMAIN SIZE; GLIDE PLANES; GRAZING INCIDENCE DIFFRACTION; HIGH CONCENTRATION; IN-PLANE; LAYER STACKS; LAYER STRUCTURES; MICROTWINS; MOSAICITY; NANOMETRES; OXIDE BUFFER LAYERS; OXIDE LAYER; SI (1 1 1); STRAIN STATE; STRAIN VARIATION; STRUCTURAL DEFECT; STRUCTURAL IMPERFECTIONS; STRUCTURAL PERFECTION; SYNCHROTRON X RAYS; WAFER SURFACE;

BUFFER LAYERS; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; SILICON WAFERS; STACKING FAULTS; SYNCHROTRONS;

GERMANIUM;

EID: 70450209146 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/42/21/215411 Document Type: Article

Times cited : (8)

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