High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1124-1127

  Lee, Y J ^a   Lee, W C ^a   Nieh, C W ^a   Yang, Z K ^a   Kortan, A R ^a   Hong, M ^a   Kwo, J ^a   Hsu, C H ^b,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; ULTRAHIGH VACUUM; YTTRIUM COMPOUNDS;

CUBIC BIXBYITE PHASE; STRUCTURAL CHARACTERISTICS; STRUCTURAL PERFECTION; UNIFORM THICKNESS;

EPITAXIAL FILMS;

EID: 44649143095     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2889387     Document Type: Article

References (14)

1. J. Kwo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126899 77, 130 (2000).
2. R. A. Mckee, F. J. Walker, and M. F. Chrisholm, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.81.3014 81, 3014 (1998).
3. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science SCIEAS 0036-8075 10.1126/science.283.5409.1897 283, 1897 (1999).
4. M. Hong, J. Kwo, P. J. Tsai, Y. C. Chang, M. L. Huang, C. P. Chen, and T. D. Lin, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.46.3167 46, 3167 (2007).
5. M. Hong, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1473178 20, 1274 (2002).
6. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1320464 77, 2710 (2000) and the references therein.
7. J. Kwo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1352688 89, 3920 (2001).
8. M. H. Cho, D. H. Ko, Y. K. Choi, I. W. Lyo, K. Jeong, and C. N. Whang, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(01)01625-X 402, 38 (2002) and references therein.
9. M. Hong, J. P. Mannaerts, J. E. Bowers, J. Kwo, M. Passlack, W.-Y. Hwang, and L. W. Tu, J. Cryst. Growth JCRGAE 0022-0248 175/176, 422 (1997).
10. M. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2147711 87, 251902 (2005).
11. M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125730 76, 312 (2000).
12. C. H. Hsu, P. Chang, W. C. Lee, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2356895 89, 122907 (2006).
13. Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1923172 86, 191905 (2005).
14. D. Y. Noh, Y. Hwu, H. K. Kim, and M. Hong, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.4441 51, 4441 (1995).