X-ray characterization of epi-Ge/Pr2O3/Si(111) layer stacks by pole figures and reciprocal space mapping

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 8, 2009, Pages 1809-1815

  Zaumseil, Peter ^a   Giussani, Alessandro ^a   Rodenbach, Peter ^a   Schroeder, Thomas ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL DEPOSITION; GE FILMS; HETEROEPITAXIAL; HIGH RESOLUTION; IN-PLANE LATTICES; LAYER STACKS; LAYER STRUCTURES; MICROTWINS; NONDESTRUCTIVE ANALYSIS; POLE FIGURE; POLE FIGURE MEASUREMENTS; RECIPROCAL SPACE MAPPING; RECIPROCAL SPACE MAPS; SCATTERING PATTERN; SEMICONDUCTOR OXIDES; SI (1 1 1); SI SUBSTRATES; STACKING ORIENTATION; STRAIN STATE; STRUCTURAL DEFECT; STRUCTURAL PERFECTION; X-RAY CHARACTERIZATION; X-RAY DIFFRACTION TECHNIQUES; X-RAY TECHNIQUES;

EPITAXIAL GROWTH; POLES; SILICON; SUBSTRATES;

GERMANIUM;

EID: 68649084220     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881581     Document Type: Conference Paper

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