Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective

Solid-State Electronics

Volumn 53, Issue 5, 2009, Pages 526-529

  Ji, Hangfeng ^a   Das, Jo ^b   Germain, Marianne ^b   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

FET; Gallium compounds; Raman spectroscopy; Temperature measurement; Thermal boundary resistance

Indexed keywords

A THERMALS; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; AS-GROWN; BONDING LAYERS; FET; INTERFACIAL LAYERS; LASER LIFT-OFFS; METAL BONDINGS; POTENTIAL BENEFITS; SAPPHIRE SUBSTRATES; SI SUBSTRATES; SUBSTRATE TRANSFERS; THERMAL BOUNDARY RESISTANCE; THERMAL STUDIES;

CORUNDUM; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REMOTE SENSING; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON; SPECTRUM ANALYSIS; TEMPERATURE MEASUREMENT;

SUBSTRATES;

EID: 65049083116     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.02.006     Document Type: Article

References (13)

1. Mishra U.K., Shen L., Kazior T.E., and Wu Y.F. Proc IEEE 96 (2008) 287-305
2. Kuball M, Pomeroy JW, Simms R, Riedel GJ, Ji H, Sarua A, et al. In: Compound semiconductor integrated circuit symposium; 2007. p. 1-4.
3. Ji H., Kuball M., Sarua A., Das J., Ruythooren W., Germain M., et al. IEEE Trans Electron Dev 53 (2006) 2658-2661
4. Das J., Oprins H., Ji H., Sarua A., Ruythooren W., Derluyn J., et al. IEEE Trans Electron Dev 53 (2006) 2696-2702
5. Francis D, Wasserbauer J, Faili F, Babic D, Ejeckam F, Hong W, et al. In: CS MANTECH conference, Austin, T, USA; 2007.
6. Das J., Ruythooren W., Vandersmissen R., Derluyn J., Germain M., and Borghs G. Phys Status Solidi (c) 2 (2005) 2655-2658
7. Felbinger J.G., Chandra M.V.S., Sun Y., Eastman L.F., Wasserbauer J., Faili F., et al. IEEE Electron Dev Lett 28 (2007) 948-950
8. Krost A., and Dadgar A. Phys Status Solidi (a) 194 (2002) 361-375
9. Kuball M., Hayes J.M., Uren M.J., Martin I., Birbeck J.C.H., Balmer R.S., et al. IEEE Electron Dev Lett 23 (2002) 7-9
10. Kuball M., Rajasingam S., Sarua A., Uren M.J., Martin T., Hughes B.T., et al. Appl Phys Lett 82 (2002) 124
11. Kelly M.K., Vaudo R.P., Phanse V.M., Gorgens L., Ambacher O., and Stutzmann M. Jpn J Appl Phys 38 (1999) 38
12. Sarua A., Ji H., Hilton K.P., Wallis D.J., Uren M.J., Martin T., et al. IEEE Trans Electron Dev 54 (2007) 3152-3158
13. Felbinger J.G., Chandra M.V.S., Sun Y., Eastman L.F., Wasserbauer J., Faili F., et al. IEEE Electron Dev Lett 28 (2007) 948-950