Chapter 8 Si1-yCy and Si1-x-yGexCy Alloy Layers

Semiconductors and Semimetals

Volumn 56, Issue C, 1998, Pages 387-422

  Eberl, Karl ^a   Brunner, Karl ^a   Schmidt, Oliver G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY LAYERS;

SILICON ALLOYS;

EID: 77956669944     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62586-7     Document Type: Chapter

References (118)

1. Abstreiter G., Schittenhelm P., Engel C., Silveira E., Zrenner A., Meertens D., and Jäger W. Semicond. Sci. Technol 11 (1996) 1512
2. Amour S., Liu C.W., Sturm J.C., Lacroix Y., and Thewalt M.L.W. Appl. Phys. Lett. 67 (1995) 3915
3. Amour S., Liu C.W., Sturm J.C., Lacroix Y., and Thewalt M.L.W. Thin Solid Films 294 (1997) 112
4. Apetz R., Vescan L., Hartmann A., Dieker C., and Lüht H. Appl. Phys. Lett. 66 (1995) 445
5. Atzomon Z., Bair A.E., Jaquez E.J., Mayer J.W., Chandrasekhar D., Smith D.J., Hervig R.L., and Robinson McD. Appl. Phys. Lett. 65 (1994) 2559
6. Bair A.E., Alford T.L., Atzmon Z., Marcus S.D., Doller D.C., Morton R., Lau S.S., and Mayer J.W. Mater. Res. Soc. Symp. Proc. 427 (1996) 529 Advanced Metallization for Future ULSI
7. Boher P., Stehle M., Stehle J.L., Fogarassy E., Grob J.J., Grab A., and Muller D. Mater. Res. Soc. Symp. Proc 452 Advances in Microcrystalline and Nanocrystalline Semiconductors (1997) 959
8. Boucaud P., Francis C., Larré A., Julien F.H., Lourtioz J.M., Bouchier D., Bonar S., and Regolini J.T. Appl. Phys. Lett. 66 (1995) 70
9. Boucaud P., Francis C., Larré A., Julien F.H., Lourtioz J.M., Bouchier D., Bonar S., and Regolini J.T. Appl. Phys. Lett 64 (1995) 875
10. Boucaud P., Lourtioz J.-M., Julein F.H., Warren P., and Dutoit M. Appl. Phys. Lett 69 (1996) 1734
11. Boulmer J., Guedj C., and Débarre D. Thin Solid Films 294 (1997) 137
12. Brunner K., Eberl K., and Winter W. Phys. Rev. Lett 76 (1996) 303
13. Brunner K., Eberl K., and Winter W. Appl. Phys. Lett 69 (1996) 91
14. Brunner K., Winter W., and Eberl K. Appl. Phys. Lett 69 (1996) 1279
15. Brunner K., Winter W., and Eberl K. Proc. 23rd Internat Conf. on Phys. of Semicond. Berlin (1996), World Scientific, Singapore 1847
16. Brunner K., Eberl K., and Winter W. Mater. Res. Soc. Symp. Proc 405 (1996) Surface/Interface and Stress Effects in Electronic Material Nanostructures, 87.
17. Brunner K., Winter W., Eberl K., Jin-Phillipp N.Y., and Phillipp F. J. Crystal Growth 175/176 (1997) 451
18. Brunner, K. and Eberl, K. Patent No: DPA 19533313, US Patent 08/708 343. (1997). Semiconductor Structure for a Transistor.
19. Chang C.L., Amour A., and Sturm J.C.St. Appl. Phys. Lett. 70 (1997) 1557
20. Chen F., Orner B.A., Guerin D., Khan A., Berger P.R., Shah S.I., and Kolodzey J. IEEE Electron Device Lett. 17 (1996) 589
21. Demkov A.A., and Sankey O.F. Phys. Rev. B 48 (1993) 2207
22. Dietrich B., Osten H.J., Rücker H., Methfessel M., and Zaumseil P. Phys. Rev. B. 49 (1994) 17185
23. Dollfus, P. and Meyer, M. (January 1997) University Paris XI, Orsay, privat communication.
24. Dutartre D., Bremond G., Souifi A., and Benyattou T. Phys. Rev. B 44 (1991) 11525
25. Eberl K., Iyer S.S., Tsang J.C., Goorsky M.S., and LeGoues F.K. J. Vac. Sci. Technol., B. 10 (1992) 934
26. Eberl K., Iyer S.S., Zollner S., Tsang J.C., and LeGoues F.K. Appl. Phys. Lett 60 (1992) 3033
27. Eberl K., Iyer S.S., and LeGoues F.K. Appl. Phys. Lett. 64 (1994) 739
28. Eberl K., Brunner K., and Winter W. Thin Solid Films 294 (1997) 98
29. Eberl, K. and Brunner, K., Patent No: 97105791.4-2203. (1997). Semiconductor components, in particular light emitting diodes, optical modulators and wave guides with multilayer structures grown on silicon substrate
30. Ershov M., and Ryzhii V. J. Appl. Phys. 76 (1994) 1924
31. Faschinger W., Zerlauth S., Bauer G., and Palmetshofer L. Appl. Phys. Lett 67 (1995) 3933
32. Fischer G.G., Zaumseil P., Bugiel E., and Osten H.J. J. Appl. Phys. 77 (1995) 1934
33. Fischer G.G., and Zaumseil P. J. Phys. D 28 (1995) A109
34. Fischer G.G., Zaumseil P., Brunner K., and Eberl K. J. Appl. Phys. 81 (1997) 6134
35. Glück M., König U., Brunner K., Winter W., and Eberl K. In: Petroff P. (Ed). Journal Physica E, Low Dimensional Systems and Nanostructures (1998), Elsevier Science, New York (in press).
36. Goorsky M.S., Iyer S.S., Eberl K., Legoues F.K., Angekllo F., and Cardone F. Appl. Phys. Lett. 60 (1992) 2758
37. Gryko J., and Sankey O.F. Phys. Rev. B 51 (1995) 7295
38. Gutheit T., Heinau M., Fuesser H.-J., Wild C., Koidl P., and Abstreiter G. JCryst. Growth 157 (1995) 426
39. He G., Savellano M.D., and Atwater H.A. Appl. Phys. Lett. 65 (1995) 1159
40. Hiroi M., and Tatsumi T. Cryst. Growth 150 (1995) 1005
41. Houghton D.C., Aers G.C., Rowell N.L., Brunner K., Winter W., and Eberl K. Phys. Rev. Lett. 78 (1997) 2441
42. Huang F.Y., and Wang K.L. Appl. Phys. Lett. 69 (1996) 2330
43. Ismail K., LeGoues F.K., Saenger K.L., Arafa M., Chu J.O., Mooney P.M., and Meyerson B.S. Phys. Rev. Lett. 73 (1994) 3447
44. Iyer S.S., Eberl K., Goorsky M.S., LeGoues F.K., Tsang J.C., and Cardone F. Appl. Phys. Lett. 60 (1992) 356
45. Iyer S.S., and LeGoues F.K. J. Appl. Phys. 65 (1989) 4693
46. Jacobsson H., Xiang J., Herbots N., Whaley S., Ye P., and Hearne S. J. Appl. Phys 81 (1997) 3081
47. Jain S.C., Osten H.J., Dietrich B., and Riicker H. Semicond. Sci. Technol. 10 (1995) 1289
48. Joelsson K.B., Ni W.-X., Pozina G., Radamson H.H., and Hansson G.V. Appl. Phys. Lett 71 (1997) 653
49. Kantor Z., Fogarassy E., Grob A., Grob J.J., Muller D., Prevot B., and Stuck R. Appl. Surf. Sci. 109 (1997) 305
50. Kasper E., and Schäffler F. In: Persall T.P. (Ed). Group TV Compounds. Semiconductors and Semimetals 33 (1991), Academic, New York 223-309
51. Kelires P.C. Phys. Rev. Lett 75 (1995) 1114
52. Kelires P.C. Phys. Rev., B 55 (1997) 8784
53. Kim M., and Osten H.J. Appl Phys. Lett. 70 (1997) 1702
54. Kissinger W., Weidner M., Osten H.J., and Eichler M. Appl. Phys. Lett 65 (1994) 3356
55. Kobayashi N., Hasegawa M., Hayashi N., Katsumata H., Makita Y., Shibata H., and Uekusa S. Appl. Surf. Sci. 100/101 (1996) 498
56. Kolodzey J., Berger P.R., Orner B.A., Hits D., Chen E., Khan A., Shao S., Waite M.M., Ismat Shah S., Swann C.P., and Unruh K.M. J. Crystal Growth 157 (1995) 386
57. Kramer K.M., and Thompson M.O. Mater. Res. Soc. Symp. Proc. (1996) 398 Thermodynamics and Kinetics of Phase Transformations, 127.
58. Kusunoki I., Takagaki T., Igari Y., and Takaoka T. Inst. Phys. Conf. Ser. 142 (1996) Silicon Carbide and Related Materials, 1059.
59. Landolt-Börnstein. In: Madelung O. (Ed). Numerical Data and Functional Relationships in Science and Technology (1982), Springer-Verlag, Berlin New Series, Group III, 17a
60. Lanzerotti L.D., Amour A.S., Liu C.W., and Sturm J.C. Tech. Dig. IEDM (1994) 930
61. Lanzerotti L.D., Amour A., Liu C.W.St., Sturm J.C., Watanabe J.K., and Theodore N.D. IEEE Electron Device Lett 17 (1996) 334
62. Lippert G., Osten H.J., Krüger D., Gaworzewski P., and Eberl K. Appl. Phys. Lett. 66 (1995) 3197
63. Lu X., and Cheung N.W. Mater. Res. Soc. Symp. Proc (1995) 388 Film Synthesis and Growth Using Energetic Beams, 195.
64. Lu X., and Cheung N.W. Appl. Phys. Lett 69 (1996) 1915
65. Mamor M., Meyer E., Bouchier D., Vialaret G., Finkman E., Bodnar S., and Regolini J.L. Appl. Surf. Sci. 102 (1996) 134
66. Manku T., and Nathan A. IEEE Electron Dev. Lett 12 (1991) 704
67. Melendez-Lira M., Menéndez J., Windl W., Sankey O.E., Spencer G.S., Sego S., Culbertson R.B., Bair A.E., and Alford T.L. Phys. Rev. B 54 (1996) 12866
68. Menéndez J., Gopalan P., Spencer G.S., Cave N., and Strane J.W. Appl. Phys. Lett 66 (1995) 1060
69. Meyer E., Mamor M., Aubry-Fortuna V., Warren P., Bodnar S., Dutartre D., and Regolini J.L. J. Electron. Mater. 25 (1996) 1748
70. Mi J., Warren P., Letoureneau P., Judelewicz M., Gailhanou M., Dutoit M., Cubois C., and Dupuy J.C. Appl. Phys. Lett. 67 (1995) 259
71. Nayak D.K., and Chun S.K. Appl. Phys. Lett. 64 (1994) 2514
72. Nayak D.K., Woo J.C.S., Park J.S., Wang K.L., and MacWilliams K.P. Jap. J. Appl. Phys. 33 (1994) 2412 Part 1
73. Orner B.A., and Kolodzey J. J. Appl. Phys. 81 (1997) 6773
74. Orner B.A., Olowolafe J., Roe K., Kolodzey J., Laursen T., Mayer J.W., and Spear J. Appl. Phys. Lett 69 (1996) 2557
75. Osten H.J., Bugiel E., and Zaumseil P. Appl. Phys. Lett 64 (1994) 3440
76. Osten H.J., Endisch D., Bugiel E., Dietrich B., Fischer G.G., Kim M., and Zaumseil P. Semicond. Sci. Technol 11 (1996) 1678
77. Osten J., Kim M., Pressel K., and Zaumseil P. J. Appl. Phys. 80 (1996) 6711
78. Osten H.J., and Gaworzewski P. J. Appl. Phys. (1997) in press.
79. Osten H.J., and Klatt J. Appl. Phys. Lett 65 (1994) 630
80. Osten H.J., and Bugiel E. Appl. Phys. Lett 70 (1997) 2813
81. Osten H.J., Lippert G., Gaworzewski P., and Sorge R. Appl. Phys. Lett 71 (1997) 1522
82. Osten, H.J., Lippert, G., Barth, R., Heinemann, B., Riicker, H., and Schley, P. (1997b). IEDM Proceedings, to be published
83. Penn C., Zerlauth S., Stangl J., Bauer G., Brunthaler G., and Schäffler F. Appl. Phys. Lett (1997) in press.
84. Pettersson P.O., Ahn C.C., McGill T.C., Croke E.T., and Hunter A.T. Appl. Phys. Lett 67 (1995) 2530
85. Posthill J.B., Rudder R.A., Hattanggady S.V., Fountain C.G., and Markunas R.J. Appl. Phys. Lett 56 (1990) 734
86. Powel A.P., Eberl K., Ek B.A., and Iyer S.S. JCryst. Growth 127 (1993) 425
87. Powell A.R., Eberl K., Ek B.A., and Iyer S.S. J. Cryst. Growth 127 (1993) 425
88. Powel A.R., and Iyer S. Jap. J. Appl. Phys. 33 (1994) 2388 Part 1
89. Powel A., LeGoues F.K., Iyer S.S., and Ek B. Jap. J. Appl. Phys. 33 (1994) 2388
90. Regolini J.L., Gisbert R., Dolino G., and Boucaud P. Mater. Lett 18 (1993) 57
91. Rim K., Takagi S., Welser J.J., Hoyt J.L., and Gibbons J.F. Mat. Res. Soc. Symp. Proc. 397 (1995) 327
92. Rücker H., Methfessel M., Bugiel E., and Osten H.J. Phys. Rev. Lett. 72 (1994) 3578
93. Rücker H., Methfessel M., Dietrich B., Pressel K., and Osten H.J. Phys. Rev. B 53 (1996) 1302
94. Schäffler F. Semicond. Sci. and Technol (1997) in press.
95. Schmidt O.G., Lange C., Eberl K., Kienzle O., and Ernst F. Appl Phys. Lett. 71 (1997) 2340
96. Schmidt O.G., Lange C., Eberl K., Kienzle O., and Ernst F. Thin Solid Films 321 (1998) 70
97. Schmidt O.G., and Eberl K. Phys. Rev. Lett 80 (1998) 3396
98. Soref R.A. J. Appl. Phys. 70 (1991) 2470
99. Soref R.A. J. Vac. Sci. Technol, A 14 (1996) 913
100. Soref R.A., Altmon Z., Shaapur F., and Robinson M. Opt Lett 21 (1996) 345
101. Stein B.L., Yu E.T., Croke E.T., Hunter A.T., Lausen T., Bair A.E., Mayer J.W., and Ahn C.C. Appl. Phys. Lett 70 (1997) 3413
102. Strane J.W., Stein H.J., Lee L.R., Doyle B.L., Picraux S.T., and Mayer J.W. Appl. Phys. Lett 63 (1993) 2786
103. Sturm J.C., Manoharan H., Lenchyshyn L.C., Thewalt M.L.W., Rowell M.L., Noel J.-P., and Houghton D.C. Phys. Rev. Lett 66 (1991) 1362
104. Sunamura H., Usami N., Shiraki Y., and Fukatsu S. Appl. Phys. Lett 66 (1995) 3024
105. Tersoff J. Phys. Rev. Lett 64 (1990) 1757
106. Thewalt M.L.W., Harrison C.A., Reinhart C.F., Wolk J.A., and Lavontaine H. Phys. Rev. Lett 79 (1997) 269
107. Todd M., Matsunaga P., and Kouvetakis J. Appl. Phys. Lett 67 (1995) 1247
108. Todd M., Matsunaga P., Kouvetakis J., Chandrasekhar D., and Smith D.J. Appl. Phys. Lett 67 (1995) 1247
109. Tsang J.C., Eberl K., Zollner S., and Iyer S. Appl. Phys. Lett 61 (1992) 961
110. Usami N., Issiki F., Nayak D.K., Shiraki Y., and Fukatsu S. Appl Phys. Lett 67 (1995) 524
111. Usami N., Shiraki Y., and Fukatsu S. Appl Phys. Lett 68 (1996) 2340
112. Warren P., Dutoit M., Boucaud P., Lourtioz J.-M., and Julien F.H. Thin Solid Films 294 (1997) 125
113. Warren P., Mi J., Overney E., and Dutoit M. JCryst. Growth 157 (1995) 414
114. Xie Y.H., Monroe D., Fitzgerald E.A., Silverman P.J., Thiel F.A., and Watson G.P. Appl. Phys. Lett 63 (1993) 2263
115. Xie J., Zhang K., and Xie X. J. Appl. Phys. 77 (1995) 3868
116. Zerlauth S., Seyringer H., Penn C., and Schäffler F. Appl. Phys. Lett (1997) in press.
117. Zollner S. J. Appl. Phys. 78 (1995) 5209
118. Zollner S., Herzinger C.M., Woollam J.A., Iyer S.S., Powell A.P., and Eberl K. Solid State Commun. 96 (1995) 305