SCOPUS 정보 검색 플랫폼

Volumn 100-101, Issue , 1996, Pages 498-502

Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

(7) Kobayashi, N a Hasegawa, M a Hayashi, N a Katsumata, H a,b Makita, Y a Shibata, H a Uekusa, S b

a ELECTROTECHNICAL LABORATORY (Japan)

b MEIJI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; CRYSTAL DEFECTS; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BOMBARDMENT; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

BINARY ALLOY SEMICONDUCTOR THIN FILMS; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; METASTABLE ALLOY SEMICONDUCTORS; PHOTOLUMINESCENCE MEASUREMENT; SOLID PHASE EPITAXIAL GROWTH;

SYNTHESIS (CHEMICAL);

EID: 0030564309 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00327-3 Document Type: Article

Times cited : (5)

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