Normal-incidence epitaxial SiGeC photodetector near 1.3 μm wavelength grown on Si substrate

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2330-2332

  Huang, F Y ^a   Wang, Kang L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; DRY ETCHING; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; FABRICATION; LEAKAGE CURRENTS; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

BIAS VOLTAGES; CARRIER TRAPPING; PHOTOCURRENT RESPONSE; SILICON GERMANIUM CARBIDE; STRAINED LAYER SUPERLATTICE;

PHOTODIODES;

EID: 0030262755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117514     Document Type: Article

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