Evolution of implanted carbon in silicon upon pulsed excimer laser annealing: Epitaxial Si 1-y C y alloy formation and SiC precipitation

Applied Surface Science

Volumn 109-110, Issue , 1997, Pages 305-311

  Kantor Z ^a,b   Fogarassy, E ^b   Grob, A ^b   Grob, J J ^b   Muller, D ^b   Prevot B ^b   Stuck, R ^b  

^a RESEARCH GROUP ON LASER PHYSICS   (Hungary)

^b Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL LATTICES; EPITAXIAL GROWTH; EXCIMER LASERS; INFRARED SPECTROSCOPY; ION IMPLANTATION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

IMPLANTATION ENERGIES; ION CURRENT; LASER ANNEALING;

THIN FILMS;

EID: 0031075085     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00739-8     Document Type: Article

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