Current transport characteristics of SiGeC/Si heterojunction diode

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 589-591

  Chen, F ^a   Orner, B A ^a   Guerin, D ^a   Khan, A ^a   Berger, P R ^a,c   Shah, S Ismat ^b   Kolodzey, J ^a,c  

^a UNIVERSITY OF DELAWARE   (United States)

^b DUPONT COMPANY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

CAPACITANCE VOLTAGE CHARACTERISTICS; CURRENT TRANSPORT CHARACTERISTICS; ELECTRON INJECTION; HALL EFFECT MEASUREMENTS; HETEROJUNCTION DIODE; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DIODES;

EID: 0030403278     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545780     Document Type: Article

References (8)

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