Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 137-140

  Boulmer, J ^a   Guedj, C ^a   Debarre D ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Chemisorption; Infrared absorption spectroscopy; IV IV alloy; Laser doping; Laser melting; Methane; Propylene; Pulsed laser induced epitaxy; SiC; SiGeC

Indexed keywords

CHEMISORPTION; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; LASER APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

LASER DOPING; PULSED LASER INDUCED EPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031072537     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09293-0     Document Type: Article

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