Fabrication and band alignment of pseudomorphic Si1-yCy, Si1-x-yGexCy and coupled Si1-yCy/Si1-x-yGexCy quantum well structures on Si substrates

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 451-458

  Brunner, K ^a   Winter, W ^a   Eberl, K ^a   Jin Phillipp, N Y ^b   Phillipp, F ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Band alignment; Molecular beam epitaxy; Photoluminescence; Quantum well; Si1 xGex; SiGeC

Indexed keywords

ELECTRON ENERGY LEVELS; ENERGY GAP; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BAND ALIGNMENT; ELECTRON CONFINEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031141841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00947-5     Document Type: Article

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