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Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 125-128

RTCVD growth and characterization of SiGeC multi-quantum wells

(5) Warren, P a Dutoit, M a Boucaud, P b Lourtioz, J M b Julien, F H b

a EPFL (Switzerland)

b UNIV PARIS SUD (France)

Author keywords

Chemical vapour deposition; Growth mechanism; Multilayers; Superlattices

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

HETEROSTRUCTURES; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031069396 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09222-X Document Type: Article

Times cited : (9)

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