Schottky diodes on Si1-x-yGexCy alloys: Effect of the C-incorporation

Applied Surface Science

Volumn 102, Issue , 1996, Pages 134-137

  Mamor, M ^a   Meyer, F ^a   Bouchier, D ^a   Vialaret, G ^a   Finkman, E ^b   Bodnar, S ^c   Regolini, J L ^c  

^a CNRS   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; COMPOSITION EFFECTS; ELECTRIC CURRENT MEASUREMENT; ENERGY GAP; FERMI LEVEL; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN RATE;

CARBON FRACTION; RAPID THERMAL CHEMICAL DEPOSITION REACTOR; SCHOTTKY BARRIER HEIGHT; TUNGSTEN CONTACTS;

SEMICONDUCTING FILMS;

EID: 0030564870     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00059-1     Document Type: Article

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