Schottky barrier heights on IV-IV compound semiconductors

Journal of Electronic Materials

Volumn 25, Issue 11, 1996, Pages 1748-1753

  Meyer, F ^a   Mamor, M ^a   Aubry Fortuna, V ^a   Warren, P ^b   Bodnar, S ^b   Dutartre, D ^b   Regolini, J L ^b  

^a CNRS   (France)

^b ORANGE LABS   (France)

Author keywords

Schottky barrier height; Si1 x yGexCy; Strain; Tungsten

Indexed keywords

EID: 0001091208     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-996-0030-3     Document Type: Article

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