Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 1, 1996, Pages 91-93

  Brunner, K ^a   Eberl, K ^a   Winter, W ^a   Jin Phillipp, N Y ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009455292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118130     Document Type: Article

References (11)

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2. A review is, e.g., in: Properties of Strained and Relaxed Silicon Germanium, EMIS Datareviews Series No. 12, edited by E. Kasper (IEE, Stevenage, UK, 1995).
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