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Volumn 71, Issue 11, 1997, Pages 1522-1524

Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000782235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119955     Document Type: Article
Times cited : (28)

References (19)
  • 5
    • 0001548018 scopus 로고
    • Carbon in Monocrystalline Silicon
    • edited by T. S. Moss Elsevier Science, New York
    • G. Davies and R. C. Newman, Carbon in Monocrystalline Silicon, in Handbook of Semiconductors, Vol. 3, edited by T. S. Moss (Elsevier Science, New York, 1994).
    • (1994) Handbook of Semiconductors , vol.3
    • Davies, G.1    Newman, R.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.