Strain relaxation in tensile-strained Si1-yCy layers on Si(001)

Semiconductor Science and Technology

Volumn 11, Issue 11, 1996, Pages 1678-1687

  Osten, H J ^a   Endisch, D ^b,c   Bugiel, E ^a   Dietrich, B ^a   Fischer, G G ^a   Kim, Myeongcheol ^a   Kruger D ^a   Zaumseil, P ^a  

^a IHP   (Germany)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; MICROELECTRONIC PROCESSING; SILICON; STRAIN RATE; TENSILE PROPERTIES;

LAYERED SYSTEMS; STRAIN RELAXATION; TENSILE STRAINED LAYERS;

HETEROJUNCTIONS;

EID: 0030287829     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11/007     Document Type: Article

References (37)

1. Jain S C 1994 Germanium-Silicon Strained Layers and Heterostructures (Boston: Academic)
2. People R and Bean J C 1985 Appl. Phys. Lett. 47 322
3. Jain S C, Osten H J, Dietrich B and Rücker H 1995 Semicond. Sci. Technol. 10 1289
4. Powell A R, Eberl K, Ek B A and Iyer S S 1993 J. Crystal Growth 127 425
5. Osten H J, Bugiel E and Zaumseil P 1994 Appl. Phys. Lett. 64 3440
6. Regolini J L, Gisbert F, Dolino G and Boucaud P 1993 Mater. Lett. 18 57
7. Mi J, Warren P, Letourneau P, Judelewicz J, Gailhanou M, Dotoit M, Dubois C and Dupuy J C 1995 Appl. Phys. Lett. 67 259
8. Fischer G G, Zaumseil P, Bugiel E and Osten H J 1995 J. Appl. Phys. 77 1934
9. Powell A R, LeGoues F K and Iyer S S 1994 Appl. Phys. Lett. 64 324
10. Goorsky M S, Iyer S S, Eberl K and LeGoues F K 1992 Appl. Phys. Lett. 60 2758
11. Powell A R, Eberl K, Legoues F K and Ek B A 1993 J. Vac. Si. Technol. B 11 1064
12. Warren P, Mi J, Overney F and Dutoit M 1995 J. Crystal Growth 157 414
13. Kyutt R N, Petrashen P V and Sorokin L M 1980 Phys. Status Solidi. a 60 381
14. Chu W K, Mayer J W and Nicolet M-A 1978 Backscattering Spectrometry (New York: Academic)
15. Feldman L C, Mayer J W, Picraux S T 1982 Material Analysis by Ion Channeling (New York: Academic)
16. Leavitt J A, McIntyre L C Jr, Stoss P, Oder J G, Ashbaugh M D, Dezfouly-Arjomandy B, Yang Z-M and Lin Z 1989 Nucl. Instrum. Methods B 40/41 776
17. Endisch D, Osten H J, Zaumseil P and Zinke-Allmang M 1995 Nucl. Instrum. Methods B 100 125
18. Temple P A and Hathaway C A 1973 Phys. Rev. B 7 3685
19. Zaumseil P 1994 Phys. Status Solidi. a 141 155
20. Bugiel E, Ruvimov S and Osten H J 1996 Solid State Phenomena 47-48 595
21. Claverie A, Fauré J, Balladore J L, Simon L, Mesli A, Diani M, Kubler L and Aubel D 1995 J. Crystal Growth 157 420
22. Dietrich B, Osten H J, Rücker H, Methfessel M and Zaumseil P 1994 Phys. Rev. B 49 17 185
23. Rücker H, Methfessel M, Dietrich B, Pressel K and Osten H J 1996 Phys. Rev. B 53 1302
24. Fauchet P M 1991 Light Scattering in Semiconductor Structures and Superlattices ed D J Lockwood and J F Young (New York: Plenum) p 229
25. Tersoff J 1995 Phys. Rev. Lett. 74 5080
26. Kelires P C and Tersoff J 1989 Phys. Rev. Lett. 63 1164
27. Feenstra R M, Lutz M A, Stern F, Ismail K, Mooney P M, LeGoues F K, Stanis C, Chu J O and Meyerson B S 1995 J. Vac. Sci. Technol. B 13 1608
28. Albrecht M, Christiansen S, Michler J, Dorsch W, Strunk H P, Hansson P O and Bauser E 1995 Appl. Phys. Lett. 67 1232
29. Xie Y H et al 1994 Phys. Rev. Lett. 73 3006
30. Ruvimov S, Bugiel E and Osten H J 1995 J. Appl. Phys. 78 2323
31. Davies G and Newman R C 1994 Handbook of Semiconductors vol 3 ed T S Moss (Amsterdam: Eisevier) p 1557
32. Taylor W J, Tan T Y and Goesele U 1993 Appl. Phys. Lett. 62 3336
33. Davies G, Lightowlers E C, Newman R C and Oates A S 1987 Semicond. Sci. Technol. 2 524
34. Tersoff J 1990 Phys. Rev. Lett. 64 1757
35. Strane J W, Picraux S T, Stein H J, Lee S R, Candelaria J, Theodore D and Mayer J W 1994 Mat. Res. Soc. Symp. Proc. 321 467
36. Gillin W P and Dunstan D J 1994 Phys. Rev. B 50 7495
37. Osten H J, Methfessel M, Lippert G and Rücker H 1995 Phys. Rev. B 52 12 179