Near-band-edge photoluminescence from pseudomorphic Si1-yCy/Si quantum well structures

Physical Review Letters

Volumn 76, Issue 2, 1996, Pages 303-306

  Brunner, K ^a   Eberl, K ^a   Winter, W ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; LOW TEMPERATURE PHENOMENA; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

BAND ALIGNMENT; BAND EDGE; LINE SHIFT; NO PHONON TRANSITIONS; PSEUDOMORPHIC GROWTH; QUANTUM CONFINEMENT; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030574509     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.303     Document Type: Article

References (18)