Si1-yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 653-655

  Joelsson, K B ^a   Ni, W X ^a   Pozina, G ^a   Radamson, H H ^a   Hansson, G V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUBLIMATION; SURFACE ROUGHNESS;

BAND GAP; SURFACE DIFFUSION; TEMPERATURE MODULATION;

HETEROJUNCTIONS;

EID: 0031552819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119819     Document Type: Article

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