Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 861-869

  Baudot, S ^a,b   Andrieu, F ^b   Faynot, O ^b   Eymery, J ^a  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

Mobility; Silicon on insulator technology; Strain; X ray measurements

Indexed keywords

BIAXIAL STRAINS; C-V METHOD; CHANNEL ORIENTATIONS; EFFECTIVE MASS; EFFECTIVE MOBILITIES; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; GATE STACKS; GATE WIDTHS; GRAZING INCIDENCE X-RAY DIFFRACTION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY; MOSFETS; NMOSFETS; P-MOSFETS; PERFORMANCE IMPROVEMENTS; STRAINED SILICON-ON-INSULATOR; STRAINED-SOI; TIN GATES; X RAY MEASUREMENTS;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SMELTING; TENSILE STRAIN; TITANIUM NITRIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 77954216281     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.032     Document Type: Conference Paper

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