Strain relaxation in nanopatterned strained silicon round pillars

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Himcinschi, C ^a   Singh, R ^a   Radu, I ^a   Milenin, A P ^a   Erfurth, W ^a   Reiche, M ^a   Gosele U ^a   Christiansen, S H ^a   Muster, F ^b   Petzold, M ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON BEAM LITHOGRAPHY; FINITE ELEMENT METHOD; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SILICON; STRAIN; SUBSTRATES;

NANOPILLARS; STRAIN RELAXATION; STRAINED SILICON ROUND PILLARS;

NANOSTRUCTURED MATERIALS;

EID: 33846258094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431476     Document Type: Article

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