In-plane strain fluctuation in strained-Si/SiGe heterostructures

Applied Physics Letters

Volumn 83, Issue 21, 2003, Pages 4339-4341

  Sawano, K ^a   Koh, S ^a   Shiraki, Y ^a   Usami, N ^b   Nakagawa, K ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TENSILE STRENGTH;

HOMOEPITAXIAL GROWTH; IN PLAIN STRAIN FLUCTUATION; MICRO RAMAN SPECTROSCOPY; SILICON SILICON GERMANIDE HETEROSTRUCTURES; STRAIN RELAXATION; TENSILE STRAIN;

HETEROJUNCTIONS;

EID: 0347477182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629142     Document Type: Article

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