Specific features of the capacitance and mobility behaviors in FinFET structures

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 85-88

  Rudenko, Tamara ^a   Kilchytska, Valeria ^b   Collaert, Nadine ^c   De Gendt, S ^c   Rooyackers, Rita ^c   Jurczak, Malgorzhata ^c   Flandre, Denis ^b  

^a ISPNASU   (Ukraine)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); POLYSILICON; SILICA;

DIELECTRIC CAPACITANCE; DIELECTRIC GATE STACKS; GATE-TO-CHANNEL CAPACITANCE; INVERSION CHARGE;

MOSFET DEVICES;

EID: 33751441246     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546591     Document Type: Conference Paper

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