Grazing incidence diffraction by laterally patterned semiconductor nanostructures

Journal of Physics D: Applied Physics

Volumn 32, Issue 6, 1999, Pages 726-740

  Baumbach, T ^a,c   Lubbert D ^b,c  

^a FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

^b SAARLAND UNIVERSITY   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL LATTICES; MULTILAYERS; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE DIFFRACTION; SEMICONDUCTOR NANOSTRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 0344641991     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/6/020     Document Type: Article

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