Impact of mobility boosters (XsSOI, CESL, TiN gate) on the performance of 〈100〉 or 〈110〉 oriented FDSOI cMOSFETs for the 32nm node

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 50-51

  Andrieu, F ^a   Faynot, O ^a   Rochette, F ^b   Barbe J C ^a   Buj, C ^a   Bogumilowicz, Y ^a   Allain, F ^a   Delaye, V ^a   Lafond, D ^a   Aussenac, F ^a   Feruglio, S ^b   Eymery, J ^a   Akatsu, T ^d   Maury, P ^c   Brevard L ^a   Tosti, L ^a   Dansas, H ^a   Rouchouze, E ^c   Hartmann, J M ^a   Vandroux, L ^a   Casse M ^a   Boeuf, F ^c   Fenouillet Beranger C ^a   Brunier, F ^d   Cayrefourcq, I ^d   Mazure C ^d   Ghibaudo, G ^b   Deleonibus, S ^a   more..

^a CEA LETI   (France)

^b MINATEC   (France)

^c STMICROELECTRONICS   (France)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

GA TE LENGTHS; PMOSFET'S; STRAINED SILICON ON INSULATOR (SSOI); VLSI TECHNOLOGIES;

MOSFET DEVICES;

EID: 47249114807     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339723     Document Type: Conference Paper

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