Silicon nanowire FETs with uniaxial tensile strain

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1257-1262

  Feste, S F ^a   Knoch, J ^b   Habicht, S ^a   Buca, D ^a   Zhao, Q T ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

Multi gate devices; Si Nanowire; Strain engineering; Strained silicon

Indexed keywords

CHANNEL DIRECTIONS; MOBILITY ENHANCEMENT; MULTIGATE DEVICES; ON-CURRENTS; PLANAR DEVICES; SI NANOWIRE; SILICON NANOWIRE FETS; SILICON-ON-INSULATORS; STRAIN ENGINEERING; STRAINED SILICON; STRAINED-SOI; SUBTHRESHOLD; UNIAXIAL TENSILE STRAIN;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOWIRES; SILICON; TENSILE STRAIN; TRANSCONDUCTANCE;

SILICON WAFERS;

EID: 71949094811     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.013     Document Type: Article

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