Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 374-381

  Pala, Marco G ^a   Buran, Claudio ^a   Poli, Stefano ^b   Mouis, Mireille ^a  

^a IMEP LAHC   (France)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Double gate; Low field mobility; Nanowire; NEGF; Surface roughness

Indexed keywords

QUANTUM THEORY; SILICON; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

DOUBLE-GATE; LOW FIELD MOBILITY; NEGF; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM PHASE INTERFERENCE; QUASI-BALLISTIC TRANSPORT; SURFACE ROUGHNESS EFFECTS; TRANSFER CHARACTERISTICS;

NANOWIRES;

EID: 77954032097     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-009-0289-8     Document Type: Article

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