Full-3D real-space treatment of surface roughness in double gate MOSFETs

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 47-50

  Buran, Claudio ^a   Pala, Marco G ^a   Poli, Stefano ^b   Mouis, Mireille ^a  

^a MINATEC   (France)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING COEFFICIENTS; DIRICHLET CONDITION; DOUBLE-GATE MOSFETS; EXPONENTIAL AUTOCORRELATION; INVERSION CHARGE DENSITY; NON-EQUILIBRIUM GREEN'S FUNCTION; QUASI-BALLISTIC TRANSPORT; RANDOM GENERATION; REAL-SPACE; ROOT MEAN SQUARE; SIMULATION RESULT; SPATIAL FLUCTUATION; SUB-BAND; TRANSFER CHARACTERISTICS; TRANSVERSE DIRECTIONS;

BACKSCATTERING; BALLISTICS; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; ELECTRIC POTENTIAL; GREEN'S FUNCTION; INSTRUMENT SCALES; METAL ANALYSIS; MOSFET DEVICES; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TREATMENT; THREE DIMENSIONAL;

PHOTORESISTS;

EID: 67650663242     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897536     Document Type: Conference Paper

References (9)

1. J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat and P. Dollfus, Monte Carlo simulation of double gate MOSFET including multi sub-band description, J. Comp. Elec. 5, 439 (2006).
2. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom and D. Jovanevic, Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches, J. Appl. Phys. 92, 3730 (2002).
3. C. Buran , M. G. Pala, M. Bescond and M. Mouis., Full three-dimensional quantum approach to evaluate surface-roughness-limited magnetoresistance mobility in SNWT, J. Comp. Elec. 7, 328 (2008).
4. C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, Three Dimensional Real Space Simulation of Surface Roughness in Silicon Nanowire FETs, to be published.
5. D. K. Ferry and S. M. Goodnick, Transport in nanostructures, Cambridge, UK: Cambridge University Press, 1997.
6. 2 interface, Phys. Rev. B 32, 8171(1985).
7. S. Poli, M. G. Pala, T. Poiroux, S. Deleonibus, and G. Baccarani, Size dependence of surface-roughness-limited mobility in Silicon-nanowire FETs, IEEE Trans. Elec. Dev. 55, 2968 (2008).
8. I. Pappas, G. Ghibaudo, C.A Dimitriadis and C. Fenouillet- Béranger, Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices, Solid State Elec. 53, 54 (2009).
9. M. Lundstrom, On the mobility versus drain current relation for a nanoscale MOSFET, IEEE Electron Dev Lett 22, 293 (2001).