Experimental comparison between Sub-0.1-μm ultrathin SOI single- and double-gate MOSFETs: Performance and mobility

IEEE Transactions on Nanotechnology

Volumn 5, Issue 6, 2006, Pages 643-647

  Widiez, Julie ^b,c   Poiroux, Thierry ^b   Vinet, Maud ^b   Mouis, Mireille ^a,d   Deleonibus, Simon ^a,b  

^a IEEE

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

^d IMEP LAHC   (France)

Author keywords

Coulomb scattering; Double gate (DG); Low field mobility, metal gate; MOSFETs; Silicon on insulator (SOI) technology

Indexed keywords

CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS; TITANIUM COMPOUNDS;

CHANNEL THICKNESS; COULOMB SCATTERING; LOW FIELD MOBILITY; METAL GATE; STATIC PERFORMANCE;

MOSFET DEVICES;

EID: 33751527412     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.886786     Document Type: Article

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